林浩雄教授的著作列表 - Publication List of Hao-Hsiung Lin

Publication List of 林浩雄 Hao-Hsiung Lin

Journal articles & book chapters:

  1. H. P. Hsu, J. D. Wu, Y. J. Lin, Y. S. Huang, Y. R. Lin, and H. H. Lin, “Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques,” Jpn J. Appl. Physics, 54, 091201, 2015
  2. Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm,” Optics lett., 40, 1904-1907, 2015
  3. H. P. Hsu, P. H. Wu, J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. H. Lin, and K. K. Tiong, “Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy,” Jpn J. Appl. Physics, 53, 051201, 2014
  4. H. M. Wu, S. J. Tsai, Y. C. Chang, Y. R. Chen, and H. H. Lin, “Ordering InGaP epilayer grown on Ge substrate,” Thin Solid Films, 570, 390-393, 2014
  5. Y. C. Lin, M. H. Mao, Y. R. Lin, H. H. Lin, C. A. Lin, and L. A. Wang, “All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling,” Optics lett., 39, 4998-5001, 2014
  6. K. I. Lin, K. L. Lin, B. W. Wang, H. H. Lin, and J. S. Huang, “Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation,” Appl. Phys. Express, vol. 6, p. 121202, Dec. 2013
  7. J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. S. Tsai, and H. H. Lin, “Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure,” J. Luminescence, vol. 136, pp. 178-181, Apr. 2013
  8. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy,” J. Physics D, vol. 46, p. 035306, Jan. 2013
  9. D. N. Talwar, T. R. Yang, H. H. Lin, and Z. C. Feng, “Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001),” Appl. Phys. Lett., vol. 102, p. 052110, Jan. 2013
  10. H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “Short range structure of dilute nitride GaAsSbN,” in: Physics and Mechanics of New Materials and Their Applications, edited by I. A. Parinov and S. H. Chang, Ch. 10, pp. 107-123, 2013
  11. Y. C. Chin, J. Y. Chen, B. H. Chen, H. S. Tsai, Y. S. Huang, and H. H. Lin, “Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs,” Appl. Phys. Lett., vol. 101, issue 25, p. 251910, Dec. 2012
  12. S. T. Lo, H. E. Lin, S.-W. Wang, H. D. Lin, Y. C. Chin, H. H. Lin, J. C. Lin, and C. T. Liang, “Electron transport in a GaPSb film,” Nanoscale Res. Lett., vol. 7, p. 640, Nov. 2012
  13. J.-W. Yu, P.-C. Yeh, S.-L. Wang, W.-R. Wu, M.-H. Mao, H. H. Lin, and L.-H. Peng, “Short channel effects on gallium nitride/gallium oxide nanowire transistors,” Appl. Phys. Lett., vol. 101, issue 18, p. 183501, Oct. 2012
  14. C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs,” Appl. Phys. Lett., vol. 101, issue 9, p. 091902, Aug. 2012
  15. Y. C. Chin, H. H. Lin, and C. H. Huang, “InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction,” IEEE Electron Device Lett., vol. 33, issue 3, pp. 489-491, Mar. 2012
  16. H. P. Hsu, Y. T. Lin, and H. H. Lin, “Evidence of nitrogen reorganization in GaAsSbN alloys,” Jpn. J. Appl. Phys., vol. 51, p. 022605, Jan. 2012
  17. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy,” Thin solid film, vol. 520, issue 13, pp. 4486-4492, 2012
  18. J. M. Lin, L. C. Chou, and H. H. Lin, “Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells,” J. Vac. Sci. and Technol. B, vol. 29, issue 2, p. 021011, 2011
  19. F. Cheng, T. Fa, S. Yao, C. J. Wu, H. H. Lin, and Z. C. Feng, “Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction,” J. Phys. D, vol. 406, pp. 3219-3221, 2011
  20. Y. W. Tai, C. C. Yang, M. H. Yang, C. S. Hong, H. H. Lin, and B. Z. Wan, “Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures,” J. Taiwan Inst. of Chem. Eng, vol. 42, pp. 669-673, 2011
  21. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy,” J. Crystal Growth, vol. 318, issue 1, pp. 558-562, 2011
  22. K. J. Cheetham, A. Krier, I. Patel, J. S. Tzeng, and H. H. Lin, “Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE,” J. Phys. D, vol. 44, issue 8, p. 085404, 2011
  23. H. P. Hsu, Y. S. Huang, Y. T. Lin, H. H. Lin, and K. K. Tiong, “Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy,” Mater. Chem. Phys., vol. 124, issue 1, pp. 558 -562, Nov. 2010
  24. Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “InGaPSb/GaAs: its band offsets and application to heterojunction bipolar transistors,” Electron Device Lett., vol. 31, issue 5, pp. 434 - 436, May 2010
  25. Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN,” Appl. Phys. Lett., vol. 96, no. 01, 011903, Jan. 2010
  26. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN,” International J. of Electrical Eng., vol. 16, no. 4, pp. 319-326, Aug. 2009
  27. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures,” Appl. Phys. Lett., vol. 94, no. 21, 211906, Jun. 2009
  28. P. Sitarek, H. P. Hsu, Y. S. Huang, J. M. Lin, H. H. Lin, and K. K. Tiong, “Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures,” J. Appl. Phys., vol. 105, no. 12, 123523, Jun. 2009
  29. Y. R. Lin, H. H. Lin, and J. H. Chu, “GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer,” Electronics lett., vol. 45, issue 13, pp. 682-683, Jun. 2009
  30. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,,” Phys. Stat. Sol. A, vol. 206, no. 5, pp. 830-835, May 2009
  31. Y. R. Lin, Y. F. Lai, C. P. Liu, and H. H. Lin, “GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer,” Appl. Phys. Lett., vol. 94, no. 11, 111106, Mar. 2009
  32. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Energy gap reduction in GaAsSbN,” Appl. Phys. Lett., vol 93, no. 17, 171914, Oct. 2008
  33. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics,” Appl. Phys. Lett., vol. 93, no. 12, 121903, Sept. 2008
  34. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai, “Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance,” Thin Solid Films, vol. 516, issue 22, pp. 8049-8058, Sept. 2008
  35. T. C. Lin, T. C. Ma and H. H. Lin, “Design and fabrication of AlGaAs ambient light detectors,” IEEE Photonic Tech. Lett., Vol. 20, No. 16, 1429-1431, Aug. 2008
  36. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence of InAs0.04P0.67Sb0.29,” J. Appl. Phys., Vol. 104, 023535, Jul. 2008
  37. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, J. Y. Wu, and S. D. Lin, “Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems,” J. Physics: Condensed Matter, Vol. 20, No. 9, 295223, Jul. 2008
  38. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy,” J. Appl. Phys., Vol. 103, 113508, Jun. 2008
  39. J. R. Lee, C. R. Lu, H. L. Liu, H. H. Lin, and L. W. Sung, “Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures,” Phys. Stat. Sol. (c), Vol. 5, No. 9, 3054-3056, May 2008
  40. T. C. Ma, Y. T. Lin, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy,” J. of Crystal Growth, Vol. 310, 2854-2858, May 2008
  41. C. Y. Chen, J. R. Lee, C. R. Lu, L. W. Sun, and H. H. Lin, “Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers,” J. Phys. and Chem. Solids, Vol. 69, 493-496, Feb. 2008
  42. T. S. Wang, J. T. Tsai, K. I. Lin, J. S. Hwang, H. H. Lin, and L. C. Chou, “Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells,” Materials Science and Engineering B, 147, 131-135, Feb. 2008
  43. C. H. Chan, C. H. Lee, Y. S. Huang, J. S. Wang, and H. H. Lin, “Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy,” J. Appl. Phys., Vol. 101, 103102, May 2007
  44. Y. C. Wen, L. C. Chou, H. H. Lin, V. Gusev, K. H. Lin, and C. K. Sun, “Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects,” Appl. Phys. Lett., Vol. 90, 172102, Apr. 2007
  45. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai,, “Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy,” Appl. Phys. Lett., Vol. 90, 172106, Apr. 2007
  46. J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, L. S. Chang, J. I. Chyi, W. S. Liu, S. H. Chen, H. H. Lin, and P. W. Liu, “The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures,” Optics Express, Vol. 15, No. 8, pp. 5120-5125, Apr. 2007
  47. H. S. Fan, Y. S. Su, F. H. Chu, F. Y. Chang, H. H. Lin, and C. F. Lin, “Opposite temperature effects of quantum-dot laser under dual-wavelength operation,” Appl. Phys. Lett., Vol. 90, 181113, Apr. 2007
  48. G. Tsai, D. L. Wang, C. E. Wu, C. J. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb quaternary alloy grown by gas source molecular beam epitaxy,” J. of Crystal Growth, Vol.301-302, pp.134-138, Apr. 2007
  49. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, H. H. Lin, and K. K. Tiong, “Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells,” Phys. Stat. Sol. (a), Vol. 204, No. 2, 430-438, Feb. 2007
  50. C. H. Lin, W. W. Pai, F. Y. Chang, and H. H. Lin, “Comparative study of InAs quantum dots with different InGaAs capping methods,” Appl. Phys. Lett., 90, 063102, Feb. 2007
  51. T. T. Chen, C. L. Cheng, Y. F. Chen, F. Y. Chang, H. H. Lin, C. T. Wu, and C. H. Chen, “Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies,” Phys. Review B, 75, 033310, Jan. 2007
  52. J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures,” Nanotechnology, 18, 015401, Jan. 2007
  53. C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, H. D. Yeh, C. H. Hsu, C. T. Liang, D. R. Hang, and H. H. Lin, “An experimental study on Gamma(2) modular symmetry in the quantum Hall system with a small spin splitting,” J. Phys: Condens. Matter, 19, 026205, Jan. 2007
  54. L. C. Chou, Y. R. Lin, C. T. Wan, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy,” Microelectronics Journal, 37, 1511-1514, Dec. 2006
  55. Y. C. Wen, K. H. Lin, T. F. Kao, L. C. Chou, H. H. Lin, and C. K. Sun, “Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics,” J. of Applied Phys., 100, 103516, Nov. 2006
  56. P. W. Liu, G. Tsai, H. H. Lin, A. Krier, Q. D. Zhuang, and M. Stone, “Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy,” Appl. Phys. Lett., 89, 201115, Nov. 2006
  57. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer,” Jpn. J. of Applied Phys., Vol. 45, No. 8A, 6271-6274, Aug. 2006
  58. A. Krier, M. Stone, Q. D. Zhuang, P. W. Liu, G. Tsai, and H. H. Lin, “Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes,” Appl. Phys. Lett., 89, 091110, Aug. 2006
  59. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, J. M. Lin, H. H. Lin, and K. K. Tiong, “Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells,” J. of Physics: Condensed Matter, Vol. 18, 5927-5935, Jul. 2006
  60. C. R. Lu, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, and L. W. Sung, “Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers,” J. of Physics and Chemistry of Solids, Vol. 66, 2082-2085, Nov. 2005
  61. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, Y. T. Lin, C. S. Wang, “Performance evaluation of field-enhanced p-channel split-gate flash memory,” IEEE Electron Device Lett., Vol 26(9), 670-672, Sept. 2005
  62. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih, and H. H. Lin, “Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents,” Appl. Phys. Lett., Vol. 87, 081908, Aug. 2005
  63. W. T. Chu, H. H. Lin, H. C. Sung, Y. H. Wang, Y. T. Lin, C. H. Wang, “Shrinkable triple self-aligned field-enhanced split-gate flash memory,” IEEE Trans. on Electron Device, Vol. 51 (10), 1667-1671, Oct. 2004
  64. W. T. Chu, H. H. Lin, W. L. Tu, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, C. S. Tsai and C. S. Wang, “Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory,” IEEE Electron Device Lett., EDL-25 (9), 616-618, Sept. 2004
  65. M.-H. Mao, T.-Y. Wu, D.-C. Wu, F.-Y. Chang, and H.-H. Lin, “Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers,” Optical and Quantum Electronics, Vol. 36 (10), 927-933, Aug. 2004
  66. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, and C. S. Wang, “High SCR design for one-transistor split-gate full-featured EEPROM,” IEEE Electron Device Lett., EDL-25 (7), 498-500, Jul. 2004
  67. T. S. Lay, W. T. Kuo, L. P. Chen, Y. H. Lai, H. Hung, J. S. Wang, J. Y. Chi, D. K. Shih, and H. H. Lin, “Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy,” J. Vac. Sci. Technol. B, Vol. 22 (3), 1491-1494, Jun. 2004
  68. T. T. Chen, W. S. Su, Y. F. Chen, P. W. Liu, and H. H. Lin, “Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells,” Appl. Phys. Lett., Vol. 85 (9), 1526-1528, Jun. 2004
  69. Y.-M. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells,” Appl. Phys. Lett., Vol. 84 (14), 2548-2550, Apr. 2004
  70. D. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen and H. H. Lin, “Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation,” Physica.E, 22, 308-311, Apr. 2004
  71. P. W. Liu, G. H. Liao, and H. H. Lin, “1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy,” Electronics Lett., Vol. 40 (3), 177-178, Feb. 2004
  72. F. Y. Chang, J. D. Lee, and H. H. Lin, “Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy,” Electronics Lett, Vol. 40 (3), 179-180, Feb. 2004
  73. C. M. Lai, F. Y. Chang, H. H. Lin, and G. J. Jan, “Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy,” Jpn. J. Appl. Phys, Vol. 43 (2), 735-738, Feb. 2004
  74. D. K. Shih, H. H. Lin, and Y. H. Lin, “Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared lasers applications,” IEE Proceedings – Optoelectronics, Vol. 150, No. 3, pp. 253-258, Jun. 2003
  75. C. M. Lai, F. Y. Chang, C. W. Chang, C. H. Kao, H. H. Lin, G. J. Jan, and J. Lee, “Temperature dependence of photoreflectance in InAs/GaAs quantum dot,” Appl. Physics. Lett, Vol. 82, No. 22, pp. 3895-3897, Jun. 2003
  76. T. T. Chen, C. H. Chen, W. Z. Cheng, W. S. Su, M. H. Ya, Y. F. Chen, P. W. Liu, and H. H. Lin, “Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells,” J. Appl. Physics, Vol. 93, No.12, pp. 9655-9658, Jun. 2003
  77. L. W. Sung, and H. H. Lin, “Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers,” Appl. Physics. Lett, Vol. 83, No. 6, pp. 1107-1109, Jun. 2003
  78. G. R. Chen, H. H. Lin, J. S. Wang and D. K. Shih, “Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy,” J. Electronic Mat, Vol. 32, No. 4, pp. 244-248, Apr. 2003
  79. F. Y. Chang, C. C. Wu, and H. H. Lin, “Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers,” Appl. Physics. Lett, Vol. 82, No. 25, pp. 4477-4479, Apr. 2003
  80. D. K. Shih, H. H. Lin, L. W. Sung, T. Y. Chu, and T. R. Yang, “Band Gap Reduction in InAsN Alloys,” Jpn. J. Appl. Physic, Vol. 42, pp. 375-383, Feb. 2003
  81. J-S. Hwang, M-F. Chen, K-I Lin, C-N. Tsai, W-C. Hwang, W-Y.Chou, H. H. Lin, and M. C. Chen, “Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance,” Jpn. J. Appl. Phys, Vol. 42, pp. 5876-5879, Feb. 2003
  82. C. M. Lai, F. Y. Chang, H. H. Lin, an G. J. Jan, “A study of optical properties of InGaAs/GaAs quantum dots,” J. of the Korean Physical Society, Vol. 42, pp. S114-S119, 2003
  83. P. W. Liu, M. H. Lee, H. H. Lin, and J.-R. Chen, “Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy,” Electronics Lett, Vol. 38 (22), pp. 1355-1356, Oct. 2002
  84. Y. S. Chiu, M. H. Ma, W. S. Su, T. T. Chen, Y. F. Chen, and H. H. Lin, “Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb quantum wells induced by interface chemical bonds,” Appl. Physics. Lett, Vol. 81, No.26, pp. 4943-4945, Oct. 2002
  85. D. R. Hang, C. F. Huang, W. K. Hung, Y. H. Chang, J. C. Chen, H. C. Yang, Y. F. Chen, D. K. Shih, T. Y. Chu, and H. H. Lin, “Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well,” Semicond. Sci. Technol, 17, pp. 999-1003, Aug. 2002
  86. C. T. Lee, H. Y. Lee, and H. H. Lin, “Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers,” Jpn. J. Appl. Physic, Vol. 41, pp. 5937-5940, Jul. 2002
  87. Y. Y. Ke, M. H. Ya, Y. F. Chen, J. S. Wang, and H. H. Lin, “Photoluminescence study of hydrogen passivation in InAsxN1-x/InGaAs single quantum well on InP,” Appl. Phys. Lett, Vol. 80 (19), pp. 3539-3541, May 2002
  88. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” J. Crystal Growth, Vol. 241(3), pp. 320-324, Mar. 2002
  89. W. K. Hung, K. S. Cho, M. Y. Chem, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang, “Nitrogen induced enhancement of the electron effective mass in InAsxN1-x,” Appl. Phys. Lett, Vol. 80 (5), pp. 796-799, Feb. 2002
  90. W. C. Wu, H. Wang, and H. H. Lin, “GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs,” Electronics Lett, Vol.38, No.4, pp. 185-186, Feb. 2002
  91. S. C. Yang, H. C. Chiu, Y.-J. Chan, H. H. Lin, J.-M. Kuo, “(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications,” IEEE Trans. on Electron Devices, Vol. 48 No. 12, pp. 2906-2910, Dec. 2001
  92. J. S. Wang, H. H. Lin, L. W. Sung, and G. R. Chen, “Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy,” J. Vac. Sci. Technol. B, Vol. 19(1), pp. 202-206, Oct. 2001
  93. Ding-Kang Shih, H. H. Lin, and Y. H. Lin, “InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m,” Electronics Lett, Vol. 37, No. 22, pp. 1342-1343, Oct. 2001
  94. H. C. Chiu, S. C. Yang, Y. J. Chan, and H. H. Lin, “High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs,” IEICE Trans. Electron., Vol. E84-C, No. 10, pp. 1312-1317, Oct. 2001
  95. G. R. Chen, H. H. Lin, J. S. Wang, and D. K. Shih, “Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells,” J. of Appl. Physics., Vol. 90, pp. 6230-6235, Sept. 2001
  96. C. H. Lee, Y. H. Chang, C. F. Huang, M. Y. Huang, H. H. Lin, and C. P. Lee, “Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells,” Chinese Journal of Physics, Vol. 39, No. 4, pp. 363-368, Aug. 2001
  97. R. M. Lin, S. C. Lee, H. H. Lin, Y. T. Dai, and Y. F. Chen, “Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice,” J. of Crystal Growth, Vol. 227, pp.1034-1038, Jul. 2001
  98. C. A. Chang, C. Z. Wu, P. Y. Wang, X. J. Guo, Y. T. Wu, C. Y. Liang, F. C. Hwang, W. C. Jiang, F. J. Lay, L. W. Sung, and H. H. Lin, “Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy,” J. of Crystal Growth, Vol. 225 (2-4), pp.550-555, May 2001
  99. C. F. Huang, Y. H. Chang, C. H. Lee, H. D. Yeh, C.-T. Liang, Y. F. Chen, H. H. Lin, H. H. Cheng, and G. J. Hwang, “Insulator-quantum Hall conductor transitions at low magnetic field,” Physical Review B, Vol. 65, No. 16, pp. 045303-1 –, May 2001
  100. C. T. Lee, K. C. Shyu, I. J. Lin, and H. H. Lin, “GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer,” Materials Science and Engineering, B74, pp. 147-150, Mar. 2000
  101. J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang, and H. H. Lin, “Mechanism for photoluminescence in an InyAs1–yN/InxGa1–xAs single quantum well,” Physical Review B, Vol. 62, No. 16, pp. 10990-10994, Jan. 2000
  102. J. S. Liu, J. S. Wang, K. Y. Hsieh, H. H. Lin, “Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy,” J. Crystal Growth, Vol. 206, pp. 15-22, 1999
  103. J. S. Wang and H. H. Lin, “Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy,” J. Vac. Sci. Technol. B, Vol. 17, pp. 1997-2000, 1999
  104. J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen, and H. H. Lin, “Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance,” J. Appl. Phys, Vol. 86 (3), pp. 1460-1462, 1999
  105. K. T. Tsen, D. K. Ferry, J. S. Wang, C. S. Huang and H. H. Lin, “Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy,” Physica B: Condensed Matter, Volume 272, Issues 1-4, pp. 416-418, 1999

Conference & proceeding papers:

  1. Hao-Kai Hsieh1, Chieh Chou1, Hao-Hsiung Lin*,1,2,3, Jiunn-Jye Luo4, and Shao-Yi Li4, “Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector,” IEEE 2018次世代電子元件國際研討會 (ISNE 2018), 集思北科大會議中心 台北, May 2018
  2. Yen-Cheng Ko, Ding-Lun Wu, Che-Wei Yang, and Hao-Hsiung Lin, “Reactive-Ion Etching of Bismuth Thin Film Using CHF3,” International Electron Devices & Materials Symposium IEDMS2018, Keelung, Taiwan, ROC, 2018
  3. Xinyou Liu, Yen-Cheng Ko, Chieh Chou and Hao-Hsiung Lin, “Electrical Properties of Bismuth Thin Films Analyzed by Transmis-sion Line method,” International Electron Devices & Materials Symposium IEDMS2018, Keelung, Taiwan, ROC, 2018
  4. F. W. Pranoto, C. Y. Tsai, Y. C. Liao, L. C. Chen, K. H. Chen, H. H. Lin, and Z. C. Feng, “Photoluminescence and Raman scattering of degenerate InN,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Thu-S0102-O006, Taichung, Taiwan, Dec. 2014
  5. M. C. Liu, Z. C. Feng, and H. H. Lin, “X-ray absorption near edge structure of silicon in indium arsenide,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Thu-S1001-O002, Taichung, Taiwan, Dec. 2014
  6. T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Fri-P1002-P006, Taichung, Taiwan, Dec. 2014
  7. C. Y. Tsai, B. Xin, Z. C. Feng, Y. M. Zhang, R. X. Jia, and H. H. Lin, “Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Fri-P1002-P010, Taichung, Taiwan, Dec. 2014
  8. S. C. Chen, Y. H. Lin, and H. H. Lin, “Study of twin defects in (111)B GaAsSb by X-ray diffraction,” IEDMS 2014, international electron devices and materials symposium, 1113, Hualien, Taiwan, Nov. 2014
  9. T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “Effect of focued ion beam imaging process on the crystallinity of InAs,” IEDMS 2014, international electron devices and materials symposium, 1178, Hualien, Taiwan, Nov. 2014
  10. Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity,” MIOMD 2014 infrared optoelectronics: materials and devices, 50, Montpellier, France, Oct. 2014
  11. C. Y. Tsai, W. C. Chen, P. H. Chang, C. I. Wu, and H. H. Lin, “Band discontinuity in InAsPSb alloy system,,” MIOMD 2014 infrared optoelectronics: materials and devices, 58, Montpellier, France, Oct. 2014
  12. C. Y. Tsai, M. C. Liu, Y. C. Chin, Z. C. Feng, and H. H. Lin, “Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure,” 21th Symposium on nano device technology, Hsinchu, Taiwan, May 2014
  13. Y. H. Lin, S. C. Chen, Y. R. Chen, and H. H. Lin, “Structural properties of GaAsSb grown on (111)B GaAs,” 21th Symposium on nano device technology, Hsinchu, Taiwan, May 2014
  14. C. X. Wang, F. D. Li, S. C. Wang, M. Zhu, X. Zhang, H. H. Lin, and Z. C. Feng, “Properties of Variable Al Content of AlGaN Layers Grown by MOCVD,” OPTIC 2013, optics and photonics Taiwan, international conference 2013, SAT-S1006-O002, Zhongli, Taiwan, Dec. 2013
  15. B. W. Wang, C. J. Hong-Liao, H. H. Lin, and Z. C. Feng, “Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering,” IEDMS 2013, international electron devices and materials symposium, P2-24, Nantou, Taiwan, Nov. 2013
  16. C. X. Wang, Y. T. He, M. T. Niu, J. Y. Yao, E. Jones, Z. R. Qiu, X. Zhang, H. H. Lin, and Z. C. Feng, “Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes,” IEDMS 2013, international electron devices and materials symposium, P2-36, Nantou, Taiwan, Nov. 2013
  17. C. Y. Tsai, Y. C. Chin, and H. H. Lin, “Raman spectroscopy of GaAsPSb alloys,” IEDMS 2013, international electron devices and materials symposium, P2-62, Nantou, Taiwan, Nov. 2013
  18. H. M. Wu, Y. J. Yang, and H. H. Lin, “Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate,” TACT 2013 international thin films conference, C-O-429001, Taipei, Taiwan, Oct. 2013
  19. Y. R. Chen, and H. H. Lin, “Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs,” 40th international symposium on compound semiconductors (ISCS 2013), MoPC-01-04, Kobe, Japan, May 2013
  20. Y. C. Chin, H. H. Lin, H. S. Guo, and C. H. Huang, “GaAsPSb and its application to heterojunction bipolar transistors,” 40th international symposium on compound semiconductors (ISCS 2013), MoPC-02-11, Kobe, Japan, May 2013
  21. J. Wu, Y. T. Lin and H. H. Lin, “Defects probing by temperature dependence Raman scattering of GaAsSbN,” IEDMS 2012, international electron devices and materials symposium, CO05, Kao-hsiung, Taiwan, Dec. 2012
  22. H. M. Wu, S. J. Tsai, H. I. Ho, H. H. Lin, and Y. J. Yang, “A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells,” IEDMS 2012, international electron devices and materials symposium, AP17, Kaohsiung, Taiwan, Dec. 2012
  23. S. H. Li, C. J. Wu and H. H. Lin, “Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution,” IEDMS 2012, international electron devices and materials symposium, CP09, Kaohsiung, Taiwan, Dec. 2012
  24. W. C. Chen, L. H. Chen, Y. T. Lin and H. H. Lin, “Structural properties of InAs nanowires grown by GSMBE,” IEDMS 2012, international electron devices and materials symposium, CP45, Kaohsiung, Taiwan, Dec. 2012
  25. W. C. Chen, L. H. Chen, Y. T. Lin, and H. H. Lin, “Slanted InAs nanowires gorwn by GSMBE,” OPTIC 2012, optics and photonics Taiwan, international conference 2012, CO05, Taipei, Taiwan, Dec. 2012
  26. C. L. Chiou, Z. C. Feng, and H. H. Lin, “Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy,” OPTIC 2012, optics and photonics Taiwan, international conference 2012, Taipei, Taiwan, Dec. 2012
  27. H. H. Lin, “Sb-based zincblende alloys with strong structural disorder,” Indo-Taiwan workshop on nanodevices, Bangalore, India, Nov. 2012
  28. C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Study on the structural properties of InP0.52Sb0.48 on GaAs,” MIOMD-XI, infrared optoelectronics: materials and devices, Chicago, USA, Oct. 2012
  29. H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “Short range structure of dilute nitride GaAsSbN,” Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications, Rostov-on-Don, Russia, Jun. 2012
  30. C. J. Wu, G. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Study on the structural properties of InP0.52Sb0.48 on GaAs,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  31. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Structural properties of GaAsSb grown on GaAs,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  32. G. T. Chen, C. J. Wu, Z. C. Feng, and H. H. Lin, “Study on the lattice structure of InAsPSb grown on GaAs,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  33. L. H. Chen, Y. T. Lin, and H. H. Lin, “MBE growth of InAs nanowires on Si,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  34. C. J. Wu, K. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “X-ray absorption find structures of InPSb alloys,” International photonics conference 2011 (IPC2011), A-SA-I 7-7, Tainan, Taipei, Dec. 2011
  35. C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy,” 2011 International electron devices and materials symposia, C2-5, Taipei, Taiwan, Nov. 2011
  36. Y. T. Lin, J. S. Wu, Z. C. Feng, and H. H. Lin, “Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy,” 2011 International electron devices and materials symposia, C3-2, Taipei, Taiwan, Nov. 2011
  37. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Structural properties of (111)B GaAsSb grown on GaAs substrates,” 18th American conference on crystal growth and epitaxy, ACCGE-18, Monterey, California, USA, Jul. 2011
  38. C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAs,” 38th international symposium on compound semiconductors (ISCS 2011), P1. 08, Berlin, Germany, May 2011
  39. C. J. Wu, G. Tsai, Z. C. Feng, and H. H. Lin, “Extended X-ray absorption fine structure of InAsPSb,” 23rd international conference on indium phosphide and related materials (IPRM 2011), P-31, Berlin, Germany, May 2011
  40. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Orentation dependent phase separation in GaAsSb,” 2011 AVS international plasma workshop – on processing and characterization of advanced materials, A007, Taipei, Mar. 2011
  41. C. J. Wu, S. W. Lo, and H. H. Lin, “'InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy,” 2010 internal conference on optics and photonics in Taiwan, Tainan, Taiwan, Dec. 2010
  42. Y. R. Lan, C. J. Wu, H. H. Lin, L. Y. Chang, and Z. C. Feng, “Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy,” 2010 international conference on optics and photonics in Taiwan, Tainan, Taiwan, Dec. 2010
  43. C. J. Wu, S. W. Lo, and H. H. Lin, “InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy,” 2010 international electron devices and materials symposia, C3-4, Jhongli, Taiwan, Nov. 2010
  44. J. S. Tzeng, C. J. Wu, C. J. Hong-Liao, and H. H. Lin, “Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy,” 2010 international electron devices and materials symposia, C3-6, Jhongli, Taiwan, Nov. 2010
  45. Y. T. Lin, Y. R. Lin, C. H. Ko, C. H. Wann, and H. H. Lin, “Hetero-epitaxy of InAs on patterened Si (100) substrates,” 2010 international electron devices and materials symposia, C4-2, Jhongli, Taiwan, Nov. 2010
  46. C. J. Wu, Y. R. Lan, L. Y. Chang, Z. C. Feng, and H. H. Lin, “X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy,” 2010 Micro-optics conference (MOC'10), WP84, Hsintsu, Taiwan, Oct. 2010
  47. C. J. Wu, G. Tsai, and H. H. Lin, “Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well,” 10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X), Shanghai, China, Sept. 2010
  48. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE,” 16th international conference on crystal growth (ICCG-16), Beijing, China, Aug. 2010
  49. Y. R. Lan, C. J. Wu, H. H. Lin, T. S. Chan, and Z. C. Feng, “Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy,” Proceedings of MBE Taiwan 2010, pp. 92-93, Taipei, Taiwan, May 2010
  50. J. M. Lin, L. C. Chou, and H. H. Lin, “The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy,” 22nd international conference on indium phosphide and related materials (IPRM 2010), Kagawa, Japan, May 2010
  51. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE,” Proceedings of MBE Taiwan 2010, pp. 57-58, Taipei, Taiwan, May 2010
  52. Y. T. Lin, T. C. Ma, and H. H. Lin, “Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy,” Proceedings of MBE Taiwan 2010, pp. 59-60, Taipei, Taiwan, May 2010
  53. S. W. Lo, C. J. Wu, and H. H. Lin, “Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy,” Proceedings of MBE Taiwan 2010, pp. 86-87, Taipei, Taiwan, May 2010
  54. C. J. Wu, G. Tsai, and H. H. Lin, “Optical properties of As-rich InAsSb/InAsPSb multiple quantum well,” Proceedings of MBE Taiwan 2010, pp. 90-91, Taipei, Taiwan, May 2010
  55. J. S. Tzeng, C. J. Wu, and H. H. Lin, “Raman scattering in InAsPSb quaternary alloys,” Proceedings of MBE Taiwan 2010, pp. 90-91, Taipei, Taiwan, May 2010
  56. C. J. Wu, G. Tsai, and H. H. Lin, “Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells,” OPT2009, AO225, Taipei, Taiwan, Dec. 2009
  57. Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “Nitrogen atomic rearrangement in thermally annealed GaAsSbN,” OPT2009, IO141, Taipei, Taiwan, Dec. 2009
  58. Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD,” 2009 International electron devices and materials symposia, B1-2, Taoyuan, Taiwan, Nov. 2009
  59. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence of InAsSb/InAsPSb quantum well,” 2009 International electron devices and materials symposia, B2-2, Taoyuan, Taiwan, Nov. 2009
  60. J. M. Lin, L. C. Chou, and H. H. Lin, “The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells,” 2009 International electron devices and materials symposia, GB24, Taoyuan, Taiwan, Nov. 2009
  61. H. H. Lin, “Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures,” 2009 International electron devices and materials symposia, B3-1, Taoyuan, Taiwan, Nov. 2009
  62. Y. T. Lin, T. C. Ma, and H. H. Lin, “A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species,” 2009 International electron devices and materials symposia, B3-2, Taoyuan, Taiwan, Nov. 2009
  63. T. C. Ma, and H. H. Lin, “Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy,” 2009 International electron devices and materials symposia, B3-4, Taoyuan, Taiwan, Nov. 2009
  64. T. C. Ma and H. H. Lin, “Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN,” MBE Taiwan 2009, S-8, Hualien, Taiwan, Jun. 2009
  65. Y. T. Lin, T. C. Ma, S. P. Wang, and H. H. Lin, “Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN,” MBE Taiwan 2009, S-14, Hualien, Taiwan, Jun. 2009
  66. C. J. Wu, G. Tsai, and H. H. Lin, “InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy,” Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN, S-15, Hualien, Taiwan, Jun. 2009
  67. Y. R. Lin, J. H. Chu, and H. H. Lin, “Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers,” International conference on optics and photonics in Taiwan (OPT’08), Sat-S17-01, Taipei, Taiwan, Dec. 2008
  68. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction,” International conference on optics and photonics in Taiwan (OPT’08), Sat-S40-03, Taipei, Taiwan, Dec. 2008
  69. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN,” 2008 International electron devices and materials symposia, B1-1, Taichung, Taiwan, Nov. 2008
  70. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Band structure of dilute nitride GaAsSbN,” 2008 International electron devices and materials symposia, B3-1, Taichung, Taiwan, Nov. 2008
  71. Y. C. Chou, G. Tsai, and H. H. Lin, “Photoluminescence study of InAsPSb epilayers grown on GaAs substrates,” 2008 International electron devices and materials symposia, B5-1, Taichung, Taiwan, Nov. 2008
  72. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics,” 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9), pp. 36-37, Freiburg, Germany, Sept. 2008
  73. C. J. Wu, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum wells,” 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9), pp. 42-43, Freiburg, Germany, Sept. 2008
  74. H. H. Lin, T. C. Ma, Y. T. Lin, C. K. Chen, and T. Y. Chen, “Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy,” Proceedings of MBE Taiwan 2008, pp. 24-25, Hsinchu, Taiwan, Jun. 2008
  75. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum well,” Proceedings of MBE Taiwan 2008, pp. 35-36, Hsinchu, Taiwan, Jun. 2008
  76. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN,” 20th International conference on InP and related materials, Paris, France, May 2008
  77. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “GaAsSbN/GaAs long wavelength PIN detectors,” 20th International conference on InP and related materials, Paris, France, May 2008
  78. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, and S. D. Lin, “Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure,” American Physical Society spring meeting 2008 (APS2008), New Orleans, Louisiana, U.S.A., Feb. 2008
  79. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m,” International electron devices and materials symposia, B1-4, Hsinchu, Taiwan, Dec. 2007
  80. L. C. Chou and H. H. Lin, “Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy,” International electron devices and materials symposia, B4-3, Hsinchu, Taiwan, Dec. 2007
  81. I. C. Chen, G. Tsai, and H. H. Lin, “Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10,” International electron devices and materials symposia, B4-5, Hsinchu, Taiwan, Dec. 2007
  82. Y. R. Lin and H. H. Lin, “Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors,” International electron devices and materials symposia, B4-6, Hsinchu, Taiwan, Dec. 2007
  83. Y. T. Lin, T. C. Ma, T. Y. Chen and H. H. Lin, “Effect of thermal annealing on the optical properties of GaAsSbN,” International electron devices and materials symposia, B4-2, Hsinchu, Taiwan, Dec. 2007
  84. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally,” OPT2007, Taichung, Taiwan, Dec. 2007
  85. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN bulk layers,” OPT2007, Taichung, Taiwan, Dec. 2007
  86. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy,” OPT2007, Taichung, Taiwan, Dec. 2007
  87. L. C. Chou and H. H. Lin, “[111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy,” MBE Taiwan 2007, pp. 109-111, Kaohsiung, Taiwan, Jun. 2007
  88. T. C. Ma, T. Y. Chen, Y. T. Lin, and H. H. Lin, “Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates,” MBE Taiwan 2007, pp. 112-114, Kaohsiung, Taiwan, Jun. 2007
  89. T. C. Ma, Y. T. Lin, T. Y. Chen, L. C. Chou, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy,” 17th International conference on InP and related materials, Matsu, Japan, May 2007
  90. C. J. Wu, G. Tsai, D. L. Wang, and H. H. Lin, “InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy,” 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8), pp, 66-67, Bad Ischl, Austria, May 2007
  91. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy,” 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8), pp. 164-165, Bad Ischl, Austria, May 2007
  92. T. Y. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy,” International electron devices and materials symposia, PA-060, Tainan, Taiwan, Dec. 2006
  93. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Effects of thermal annealing on the energy gap of GaAsSbN,” International electron devices and materials symposia, OA-008, Tainan, Taiwan, Dec. 2006
  94. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy,” OPT2006, AO-11, Hsinchu, Taiwan, Dec. 2006
  95. Y. R. Lin, J. S. Wang, and H. H. Lin, “Electric vertically coupled quantum dots grown by molecular beam epitaxy,” OPT2006, AO-21, Hsinchu, Taiwan, Dec. 2006
  96. J. M. Lin, L. C. Chou, and H. H. Lin, “A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy,” OPT2006, AO-33, Hsinchu, Taiwan, Dec. 2006
  97. D. L. Wang, G. Tsai, C. J. Wu, C. E. Wu, F. Tseng, and H. H. Lin, “Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy,” OPT2006, AO-47, Hsinchu, Taiwan, Dec. 2006
  98. T. C. Ma, Y. T. Lin, T. Y. Chen, and H. H. Lin, “Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy,” OPT2006, AO-53, Hsinchu, Taiwan, Dec. 2006
  99. Y. C. Wen, L. C. Chou, H. H. Lin, K. H. Lin, C. Y. Chen, and C. K. Sun, “Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields,” OPT2006, CO-02, Hsinchu, Taiwan, Dec. 2006
  100. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy,” 14th international conference on molecular beam epitaxy (MBE2006), TUA2-6, Tokyo, Japan, Oct. 2006
  101. H. H. Lin, “MBE growth of quaternary InAsPSb alloy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  102. T. C. Ma, T. Y. Chen, S. K. Chang, Y. T. Lin, and H. H. Lin, “GaAsSbN grown on GaAs by gas source molecular beam epitaxy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  103. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  104. C. E. Wu, G. Tsai, and H. H. Lin, “Mid-infrared InAsPSb/InAsSb quantum-well light emitter,” MBE Taiwan 2006 and high K materials workshop, Chuli, Taiwan, Jun. 2006
  105. L. C. Chou, Y. R. Lin, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy,” 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS), Nottingham, UK, Apr. 2006
  106. G. Tsai and H. H. Lin, “Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy,” 17th Indium Phosphide and Related Materials, Glasgow, Scotland, 2005
  107. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih and H. H. Lin, “Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents,” 17th Indium Phosphide and Related Materials, Glasgow, Scotland, 2005
  108. H. H. Lin, P. W. Liu, C. L. Tsai, G. H. Liao, and J. Lin, “GaAsSb/GaAs quantum wells grown by MBE,” MBE Taiwan 2005, pp. 15-17, Hsinchu, Taiwan, 2005
  109. C. L. Tsai, P. W. Liu, G. H. Liao, M. H. Lee, and H. H. Lin, “Study on the band line-up of GaAsSb/GaAs quantum wells,” MBE Taiwan 2005, Hsinchu, Taiwan, 2005
  110. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum-dot laser,” MBE Taiwan 2005, pp. 15-17, Hsinchu, Taiwan, 2005
  111. G. Tsai and H. H. Lin, “InPSb bulk layers grown by gas source molecular beam epitaxy,” Mid-infrared optoelectronics: Materials and Devices (MIOMD 7), Lancaster, UK, 2005
  112. C. L. Tsai, C. T. Wan, P. W. Liu, G. H. Liao, and H. H. Lin, “Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers,” Proceedings of 2005 EDMS, B58, Kaohsiung, Taiwan, 2005
  113. P. W. Liu, G. Tsai, H. H. Lin, and T. Krier, “Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy,” OPT2005, A-FR-II 4-2, Tainan, Taiwan, 2005
  114. G. Tsai, and H. H. Lin, “Growth of InPSb on InAs inside a miscibility gap using gas source MBE,” OPT2005, A-FR-II 4-3, Tainan, Taiwan, 2005
  115. H. P. Hsu, Y. S. Huang, P.W. Liu, H. H. Lin, and K. K. Tiong, “Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells,” OPT2005, PA-FR1-089, Tainan, Taiwan, 2005
  116. C. Y. Chen, C. M. Lai, and H. H. Lin, “Numerical simulation on optical properties of GaN/AlN quantum dots,” OPT2005, PA-FR1-137, Tainan, Taiwan, 2005
  117. G. L. Wang, Y. S. Huang, H. H. Lin, and C. H. Chan, “The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well,” OPT2005, PA-FR1-196, Tainan, Taiwan, 2005
  118. H. H. Lin, P. W. Liu, G. H. Liao, and C. L. Tsai, “GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes,” Proceedings of MBE Taiwan, pp. 28-30, Kao-hsiung, Taiwan, May 2004
  119. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs quantum dots with light emission at 1.3 m,” Proceedings of MBE Taiwan, pp. 40-42, Kao-hsiung, Taiwan, May 2004
  120. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy,” Proceeding of 16th Indium Phosphide and Related Materials, Kogoshima, Japan, 2004
  121. G. Tsai, and H. H. Lin, “MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications,” OPT 2004, A-SA-II 4-2, Chung-Li, Taiwan, 2004
  122. 142. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Study on high-power resonant-cavity light-emitting diodes,” OPT 2004, A-SU-I 7-5, Chung-Li, Taiwan, 2004
  123. C. H. Yu, K. K. Kao, M. H. Mao, F. Y. Chang, and H. H. Lin, “Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection,” OPT 2004, A-SU-II 10-5, Chung-Li, Taiwan, 2004
  124. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm,” Proceedings of 2004 IEDMS, B3.3, pp. 289-29, Hsinchu, Taiwan, 2004
  125. G. H. Liao, C. L. Tsai, P. W. Liu, J. Lin, and H. H. Lin, “Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers,” Proceedings of 2004 IEDMS, B7.1, pp.471-474, Hsinchu, Taiwan, 2004
  126. F. Y. Chang, T. C. Wu, and H. H. Lin, “Effect of deposition method on the density of InAs/InGaAs quantum dot,” Proceeding of 15th Indium Phosphide and Related Materials, Santa Barbara, USA, 2003
  127. H. H. Lin, P. W. Liu, and J. R. Chen, “GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser,” Proceedings of the sixth Chinese optoelectronics symposium, pp. 112-115, Hong Kong, 2003
  128. M.-H. Mao, T.-Y. Wu, F.-Y. Chang, and H.-H. Lin, “1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 118-119, Tucson, USA, 2003
  129. H.-H. Lin, D.-K. Shih, Y.-H. Lin and K.-H. Chiang, “InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 806-807, Tucson, USA, 2003
  130. M.-H. Mao, D.-M. Yeh, P.-W. Liu, H.-H. Lin, H.-L. Chen and C.-T. Pan, “Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 1024-1025, Tucson, USA, 2003
  131. H. H. Lin, P. W. Liu, and G. H. Liao, “GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers,” Proceedings of electron devices and materials symposium, pp. I59-I62, Keelung, Taiwan, 2003
  132. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Resonant-cavity light-emitting diodes with coupled cavity,” Proceedings of electron devices and materials symposium, pp. 348-350, Keelung, Taiwan, 2003
  133. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy,” Proceedings of electron devices and materials symposium, pp. 491-494, Keelung, Taiwan, 2003
  134. Y. M. Chang, N. A. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures,” Proceedings of CLEO/Pacific Rim 2003, Vol. 2, pp. 481, Taipei, Taiwan, 2003
  135. C. L. Hsieh, T. M. Liu, M. C. Tien, C. K. Sun, L. W. Sung, and H. H. Lin, “Femtosecond carrier dynamics in InGaAsN single quantum well,” Proceedings of CLEO/Pacific Rim 2003, Vol. 1, pp. 83, Taipei, Taiwan, 2003
  136. G. Tsai, P. W. Liu, and H. H. Lin, “Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy,” Proceedings of OPT’03, Vol. 2, pp. 27-2, Taipei, Taiwan, 2003
  137. H. P. Hsu, Y. S. Huang, P. W. Liu, and H. H. Lin, “Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells,” Proceedings of OPT’03, Vol. 3, pp. 71-7, Taipei, Taiwan, 2003
  138. G. H. Liao, P. W. Liu, and H. H. Lin, “1.3m GaAsSb/GaAs single quantum well laser diode,” Proceedings of OPT’03, Vol. 3, pp. 274-, Taipei, Taiwan, 2003
  139. T. Y. Chu, H. H. Lin, and D. K. Shih, “Band gap reduction in InAsN alloy,” Proceeding of 14th Indium Phosphide and Related Materials, pp.253-256, Stockholm, Sweden, 2002
  140. P.-W. Liu, M.-H. Lee, and H. H. Lin, “Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser,” 15th Annual Meeting of IEEE Lasers and Electro-optics Society, Glasgow, Scotland, 2002
  141. T. M. Liu, M. C. Tien, J. W. Shi, C. K. Sun, L. W. Sung, H. H. Lin, B. R. Wu, and N. T. Yeh, “Femtosecond carrier dynamics in InGaAsN single quantum well,” Proceedings of OPT’02, pp. 16-18, Taipei, Taiwan, ROC, 2002
  142. L. W. Sung, G. Tsai, and H. H. Lin, “1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE,” Proceedings of OPT’02, pp. 142-144, Taipei, Taiwan, ROC, 2002
  143. D. K. Shih, H. H. Lin, and Y. F. Chen, “Structural properties and Raman modes of InAsN bulk films on (100) InP substrates,” Proceedings of OPT’02, pp. 361-363, Taipei, Taiwan, ROC, 2002
  144. L. W. Sung, G. Tsai, and H. H. Lin, “1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE,” Proceedings of 2002 IEDMS, pp. 37-40, Taipei, Taiwan, ROC, 2002
  145. D. K. Shih, H. H. Lin, and Y. F. Chen, “Raman scattering characterization of InAsN bulk film on (100) InP substrates,” Proceedings of 2002 IEDMS, pp. 43-46, Taipei, Taiwan, ROC, 2002
  146. P. W. Liu, M. H. Lee, J. R. Chen, and H. H. Lin, “Low-threshold ~1.3m GaAsSb quantum well laser,” Proceedings of 2002 IEDMS, pp. 125-128, Taipei, Taiwan, ROC, 2002
  147. F. Y. Chang, T. C. Wu, and H. H. Lin, “1.3m InAs/InGaAs quantum dot lasers grown by GSMBE,” Proceedings of 2002 IEDMS, pp. 236-239, Taipei, Taiwan, ROC, 2002
  148. C. M. Lai, F. Y. Chang, C. W. Chang, H. H. Lin, and G. J. Jan, “Optical characterization on InAs/GaAs quantum dots,” Proceedings of 2002 IEDMS, pp. 333-336, Taipei, Taiwan, ROC, 2002
  149. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “InAsN Grown by Plasma-assisted Gas Source MBE,” 2001 MRS Fall meeting, Symposium H, H2.5, Boston, USA, Nov. 2001
  150. D. K. Shih, H. H. Lin, L. W. Sung, and T. Y. Chu, “Bulk InAsN Films Grown by Plasma-Assisted Gas Source Molecular Beam Epitaxy,” Proceeding of 13th Indium Phosphide and Related Materials, pp.555-558, Nara, Japan, 2001
  151. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE,” Middle Infrared Coherent Sources MICS’01 International Workshop, St. Petersburg, Russia, 2001
  152. L. W. Sung, H. H. Lin, and C. T. Chia, “V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE,” 2001 MRS Fall Meeting, I3.22, Boston, MA, USA, 2001
  153. M. H. Lee, P. W. Liu, and H. H. Lin, “Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well,” 2001 Electron Devices and Materials Symposia, WB1-4, pp. 118-1, KaoHsiung, Taiwan, ROC, 2001
  154. T. Y. Chu, D. K. Shih, and H. H. Lin, “On the InAs(N)/InGaAs quantum wells,” 2001 Electronics Devices and Materials Symposia, WB1-6, pp.126-12, Kaohsiung, Taiwan, ROC, 2001
  155. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE,” Proceeding of Optics and Photonics Taiwan, TA3-1, pp. 41-43, Kaohsiung, Taiwan, ROC, 2001
  156. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE,” Proceeding of Optics and Photonics Taiwan’01, pp. 379-381, Kaohsiung, Taiwan, ROC, 2001
  157. P. W. Liu and H. H. Lin, “Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well,” Proceeding of Optics and Photonics Taiwan '01, pp. 441-443, Kaohsiung, Taiwan, ROC, 2001
  158. W. C. Wu, H. Wang, and H. H. Lin, “A fully integrated broadband amplifier with 161% 3-db bandwidth,” Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific, Vol. 1, pp. 291-, Taiwan, ROC, 2001
  159. H. C. Chiu, S. C. Yang, C. K. Lin, Y. J. Chan, and H. H. Lin, “In0.49Ga0.51P/ In0.15Ga0.85As doped-channel HFETs with low parasitic resistance by inserting a Si-doped layer,” 2000 topical workshop on heterostructure microelectronics, Nagoya, Aug. 2000
  160. S.C. Yang, S.C. Chiou, Y.-J. Chan, and H. H. Lin, “Selectively dry-etched In0.49Ga0.51P/ In0.15Ga0.85As double doped-channel FETs using CHF3+BCl3 plasma,” 12th international conference on InP and related material, Williamsburg, Virginia, USA, May 2000
  161. J. S. Wang, H. H. Lin, L. W. Sung and G. R. Chen, “Growth and characterization of InAsN alloys,” 12th international conference on InP and related material, Williamsburg, Virginia, USA, May 2000
  162. H. H. Lin, “InAsN grown by gas source molecular beam epitaxy,” The 4th Seminar on Science and Technology (ROC-Japan Exchange Program) -- Conference on Nitride Semiconductor Materials and Devi, Tokyo, Japan, Mar. 2000
  163. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” International Photonics Conference 2000, pp. 208-211, Hsinchu, Taiwan, 2000
  164. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy,” International Photonics Conference 2000, pp. 212-216, Hsinchu, Taiwan, 2000
  165. D. K. Shih and H. H. Lin, “InAsN grown by GSMBE,” 2000 International Electron Devices and Materials Symposia, pp. 62-65, Chung-Li, Taiwan, 2000
  166. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” 2000 International Electron Devices and Materials Symposia, pp. 66-69, Chung-Li, Taiwan, 2000
  167. F. Y. Chang and H. H. Lin, “Anomalous photoluminescence of InGaP/GaAs quantum well grown by GSMBE,” 2000 International Electron Devices and Materials Symposia, pp. 99-102, Chung-Li, Taiwan, 2000
  168. C. W. Liu, M. H. Lee, C. F. Lin, I. C. Lin, W. T. Liu, and H. H. Lin, “Light emission and detection by metal oxide silicon tunneling diodes,” 1999 IEDM, Washington D. C., USA, Dec. 1999
  169. J. S. Wang, H. H. Lin, L. W. Sung, “InAsN quantum wells grown on InP by gas source MBE,” 3rd international conference on mid-infrared optoelectronics materials and devices, O21, Aachen, Germany, 1999
  170. L. W. Sung, J. S. Wang, H. P. Shiao, C. Y. Wang, I. F. Jang, T. T. Shih, Y. K. Tu, and H. H. Lin, “1.55m asymmetric coupled quantum well structure for laser-modulator integration,” 1999 Electron Devices and Materials Symposia, 3D04, Taoyuan, Taiwan, ROC, 1999
  171. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy,” 1999 Electron Devices and Materials Symposia, 1C05, Taoyuan, Taiwan, ROC, 1999
  172. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy,” Optics and Photonics/Taiwan'99, FR-III4-A-4, Chung-Li, ROC, 1999
  173. G. R. Chen, J. S. Wang, and H. H. Lin, “Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells,” Optics and Photonics/Taiwan'99, Chung-Li, FR-I6-A-8, ROC, 1999

Patents:

  1. 楊哲維、劉繼文、林浩雄、葉凌彥, “One-dimensional nanostructure growth on graphene and devices thereof,” 9,711,607 (美國專利), Jul. 2017
  2. 林浩雄、馬大鈞、林佑儒、王俊評、黃正宏, “環境光偵測器,” 中華民國,發明第 I 335075號, Dec. 2010
  3. H. H. Lin, T. C. Ma, Y. R. Lin, J. P. Wang, and C. H. Huang, “Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye,” U. S. Patent No. 7,538,406, May 2009
  4. 林浩雄、馬大鈞、吳俊逸, “類人眼之光偵測器,” 中華民國,發明第 I 287877, Oct. 2007
  5. 邱煥凱、林浩雄, “集總常數補償式高低通平衡至不平衡轉換器,” 中華民國發明專利,No. 139060, Jul. 2001
  6. 洪儒菘、林浩雄, “背靠背式雙波長半導體雷射元件,” 中華民國發明專利,No. 135640, Jun. 2001
  7. H. K. Chiou and H. H. Lin, “Lumped constant compensated high/low pass balanced-to-unbalanced transition,” U. S. Patent No. 6052039, Apr. 2000