林浩雄 Hao-Hsiung Lin

Professor, Department of Electrical Engineering, National Taiwan University

Major Research Areas:

Compound semiconductor materials and devices based on molecular beam epitaxy

Research Summary:

Our research field is mainly on the materials and devices of III-V compound semiconductor based on molecular-beam epitaxy (MBE) technology. Our first research project is the growth and characterization of dilute nitrides including GaAsSbN and InAsN. We have wide experiences on both materials. In 2002, we first demonstrated a 2.4 microns InAsN quantum well laser which possesses the longest wavelength among nitride lasers. We also have demonstrated GaAsSbN lattice-matched to GaAs and with a narrow energy gap of 0.8 eV.

  Our second project is the growth and characterization of InAsPSb alloy. We are the first group to deposit this alloy using gas-source MBE. In this subject, we have a long collaboration work with Prof. Krier at Lancaster University (UK) since 2003. Recently, we worked on the determination of the electronic structure of ternary InAsSb, including the spin-oribit, fundamental gap and band offset. For details, please refer to our publication list.

  Our third project is the heteroepitaxy of III-V compounds on patterned Si, which is supported by TSMC. The purpose is to explore the feasibility of replace the Si channel with III-V alloy.